指尖陀螺专用霍尔元件 微功耗霍尔 全级霍尔 高频低耗LH253 LH251
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LH8253MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.
LH8MH includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.
LHMH8 is rated for operation between the ambient temperatures –40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting.
The package type is in aHalogen Free version was verified by third party Lab.
Features and Benefits
l CMOS Hall IC Technology
l Solid-State Reliability much better than reed switch
l Omni polar output switches with absolute value of North or South pole from magnet
l Low power consumption(2.6mA)
l High Sensitivity for reed switch replacement
l {bfb} tested at 125℃ for K.
l Small Size
l ESD HBM ±4KV Min
l COST competitive
Applications
l Solid state switch
l Lid close sensor for power supply devices
l Magnet proximity sensor for reed switch replacement in high duty cycle applications.
l Safety Key on sporting equipment
l Revolution counter
l Speed sensor
l Position Sensor
l Rotation Sensor
l Safety Key
091713Page 1Rev. 1.04
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型号LH8253 |
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Note:Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- |
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rated conditions for extended periods may affect device reliability. |
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Electrical Specifications |
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DC Operating Parameters TA=+25℃, VDD=5.0V |
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Parameters |
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Test Conditions |
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Min |
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Typ |
Max |
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Supply Voltage,(VDD) |
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Operating |
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2.5 |
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6 |
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V |
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Supply Current,(IDD) |
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Average |
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2.6 |
6.0 |
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mA |
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Output Low Voltage,(VDSON) |
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IOUT=10mA |
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400 |
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mV |
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Output Leakage Current,(Ioff) |
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IOFF |
BOUT = 5V |
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10 |
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uA |
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Output Rise Time,(TR) |
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RL=10kΩ, CL =20pF |
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0.45 |
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uS |
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Output Fall Time,(TF) |
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RL=10kΩ; CL =20pF |
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0.45 |
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uS |
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Electro-Static Discharge |
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HBM |
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4 |
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KV |
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Operate Point, |
(BOPS) |
S pole to branded side, B > BOP, Vout On |
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30 |
60 |
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Gauss |
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(BOPN) |
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N pole to branded side, B > BOP, Vout On |
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-60 |
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-30 |
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Release Point |
(BRPS) |
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S pole to branded side, B < BRP, Vout Off |
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5 |
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25 |
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Gauss |
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(BRPN) |
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N pole to branded side, B < BRP, Vout Off |
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-25 |
-5 |
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Hysteresis,(BHYS) |
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|BOPx - BRPx| |
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5 |
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Gauss 联系人：常艳云 联系电话：18007029964 |
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